The University of Southampton
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Electronics and Computer Science
Telephone:
+442380596658
Email:
a.h.j.hamdiyah@soton.ac.uk

Dr Ayoub H. Hamdiyah PhD

Ayoub is currenly a Research Fellow within the EPSRC program grant (ADEPT – Advanced Devices by ElectroPlaTing | University of Southampton). His research focuses on Phase Change Memory (PCM) and Resistive Random Access Memory (RRAM) technologies based on chalcogenides and solution processing materials. He received his PhD in physics from the University of Hull in 2019. His research was focused on developing of optically tunable memristors baesd on hybrid organic-inorganic materials and graphene oxide. Ayoub has published many papers in high-impact journals and conferences.

Research

Research interests

  • Phase Change Memories
  • Ovonics Threshold Switching
  • Resistive Switching Memories
  • Optical Memristors
  • Neuromorphic Devices

Publications

Noori, Yasir, Meng, Lingcong, Hamdiyah, Ayoub Hassan Jaafar, Zhang, Wenjian, Kissling, Gabriela, Han, Yisong, Abdelazim, Nema, Alibouri, Mehrdad, Leblanc, Kathleen, Zhelev, Nikolay, Huang, Ruomeng, Beanland, Richard, Smith, David C., Reid, Gillian, De Groot, Kees and Bartlett, Philip N. (2021) Phase change memory by GeSbTe electrodeposition in crossbar arrays. ACS Applied Electronic Materials, 3 (8), 3610-3618. (doi:10.1021/acsaelm.1c00491).

Noori, Yasir, Meng, Lingcong, Hamdiyah, Ayoub Hassan Jaafar, Han, Yisong and Abdelazim, Nema (2021) Dataset for Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays. University of Southampton https://doi.org/10.1021/acsaelm.1c00491 [Dataset]

Hamdiyah, Ayoub Hassan Jaafar, Meng, Lingcong, Noori, Yasir and Han, Yisong (2021) Dataset for Electrodeposition of GeSbTe Based Resistive Switching Memory in Crossbar Arrays. University of Southampton doi:10.5258/SOTON/D2026 [Dataset]

Jaafar, Ayoub H., Meng, Lingcong, Noori, Yasir J., Zhang, Wenjian, Han, Yisong, Beanland, Richard, Smith, David C., Reid, Gillian, De Groot, Kees, Huang, Ruomeng and Bartlett, Philip N. (2021) Electrodeposition of GeSbTe-based resistive switching memory in crossbar arrays. Journal of Physical Chemistry C, 125 (47), 26247-26255. (doi:10.1021/acs.jpcc.1c08549).

Contact

Telephone: +44 (0) 23 8059 6658

Email: a.h.j.hamdiyah@soton.ac.uk

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